Simulation of electrical characteristics of InP/In0.24Ga0.76As0.73Sb0.27/In0.53Ga0.47As double heterojunction bipolar transistor
نویسندگان
چکیده
The electrical characteristics of InP/In0.24Ga0.76As0.73Sb0.27/In0.53Ga0.47As double heterojunction bipolar transistor (DHBT) are investigated. The study is based on energy balance (EB) transport model and TCAD SILVACO device simulator. InP/In0.24Ga0.76As0.73Sb0.27 DHBT have a low Emitter-Base conduction band discontinuity EC and a minimum base bandgap energy EG among the entire composition range of InxGa1-xAs1-ySby material lattice matched to InP. A low EmitterBase turn on voltage VBE and a low collector offset voltage VCE, as well as a high current gain cut-off frequency, are achieved. Keywords—Double heterojunction bipolar transistors (DHBTs); InP/In0.24Ga0.76As0.73Sb0.27; electrical characteristics
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